Indium-silicon co-doping effects in LEC — Grown gallium arsenide crystals
Identifieur interne : 000583 ( Main/Exploration ); précédent : 000582; suivant : 000584Indium-silicon co-doping effects in LEC — Grown gallium arsenide crystals
Auteurs : RBID : ISTEX:12242_1987_Article_BF03155905.pdfAbstract
In this paper we report the simultaneous (Si-In) doping in LEC grown GaAs crystals. The experimental results have shown that the double doping with Si (below 8317 electr./cm3) and In (around 4E19/cm3 in the melt) makes it possible to grow GaAs ingots fully single and with a remarkable tendency to lower the etch-pits density down to about 5E2-5E3/cm2 in large portions of the crystals.
DOI: 10.1007/BF03155905
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Mucchino</name><affiliation wicri:level="1"><mods:affiliation>Enichem Sintesi, Milan, Italy</mods:affiliation><country xml:lang="fr">Italie</country><wicri:regionArea>Enichem Sintesi, Milan</wicri:regionArea><wicri:noRegion>Milan</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:12242_1987_Article_BF03155905.pdf</idno><date when="1987">1987</date><idno type="doi">10.1007/BF03155905</idno><idno type="wicri:Area/Main/Corpus">000B40</idno><idno type="wicri:Area/Main/Curation">000B40</idno><idno type="wicri:Area/Main/Exploration">000583</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">In this paper we report the simultaneous (Si-In) doping in LEC grown GaAs crystals. The experimental results have shown that the double doping with Si (below 8317 electr./cm3) and In (around 4E19/cm3 in the melt) makes it possible to grow GaAs ingots fully single and with a remarkable tendency to lower the etch-pits density down to about 5E2-5E3/cm2 in large portions of the crystals.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="c7c08a29e9e1ed699c2e0dfa2aa60e23bfb4a8fd"><titleInfo lang="eng"><title>Indium-silicon co-doping effects in LEC — Grown gallium arsenide crystals</title></titleInfo><name type="personal"><namePart type="given">V.</namePart><namePart type="family">Rakovics</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Research Institute for Technical Physics of the HAS, 1325, Budapest, Hungary</affiliation></name><name type="personal"><namePart type="given">R.</namePart><namePart type="family">Fornari</namePart><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">C.</namePart><namePart type="family">Paorici</namePart><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">L.</namePart><namePart type="family">Zanotti</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>MASPEC CNR, Parma, Italy</affiliation></name><name type="personal"><namePart type="given">C.</namePart><namePart type="family">Mucchino</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Enichem Sintesi, Milan, Italy</affiliation></name><typeOfResource>text</typeOfResource><genre>Condensed Matter</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateValid encoding="w3cdtf">2009-08-07</dateValid><copyrightDate encoding="w3cdtf">1987</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">In this paper we report the simultaneous (Si-In) doping in LEC grown GaAs crystals. The experimental results have shown that the double doping with Si (below 8317 electr./cm3) and In (around 4E19/cm3 in the melt) makes it possible to grow GaAs ingots fully single and with a remarkable tendency to lower the etch-pits density down to about 5E2-5E3/cm2 in large portions of the crystals.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Acta Physica Hungarica</title></titleInfo><titleInfo><title>Acta Physica Hungarica</title><partNumber>Year: 1987</partNumber><partNumber>Volume: 61</partNumber><partNumber>Number: 2</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1987-04-01</dateIssued><copyrightDate encoding="w3cdtf">1987</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Nuclear Physics, Heavy Ions, Hadrons</topic><topic>Quantum Optics, Quantum Electronics, Nonlinear Optics</topic></subject><identifier type="issn">0231-4428</identifier><identifier type="matrixNumber">12242</identifier><identifier type="local">IssueArticleCount: 32</identifier><recordInfo><recordOrigin>Akadémiai Kiadó, 1987</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF03155905</identifier><identifier type="matrixNumber">Art30</identifier><identifier type="local">BF03155905</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>255</start><end>258</end></extent></part><recordInfo><recordOrigin>Akadémiai Kiadó, 1987</recordOrigin><recordIdentifier>12242_1987_Article_BF03155905.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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